器件名称: J/SST112
功能描述: SINGLE N-CHANNEL JFET
文件大小: 282.56KB 共2页
简 介:J/SST111 SERIES
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation (J) Continuous Power Dissipation (SST) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source -35V -35V 50mA 360mW 350mW -55 to 150°C -55 to 135°C
D S G 1 2 3 TO 92
1
SINGLE N-CHANNEL JFET
5pA 4ns J SERIES
TO-92 BOTTOM VIEW
SST SERIES
SOT-23 TOP VIEW D S
1 3 2
G
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. BVGSS VGS(off) VGS(F) IDSS IGSS IG ID(off) rDS(on) CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage Gate to Source Forward Voltage Drain to Source Saturation Current2 Gate Leakage Current Gate Operating Current Drain Cutoff Current Drain to Source On Resistance -0.005 -5 0.005 1 30 1 50 1 100 0.7 20 -1 5 -1 2 -1 mA nA pA nA TYP J/SST111 MIN -35 -3 -10 MAX J/SST112 MIN -35 -1 -5 MAX J/SST113 MIN -35 -3 V MAX UNIT CONDITIONS IG = -1A, VDS = 0V VDS = 5V, ID = 1A IG = 1mA, VDS = 0V VDS = 15V, VGS = 0V VGS = -15V, VDS = 0V VDG = 15V, ID = 10mA VDS = 5V, VGS = -10V IG = 1mA, VDS = 0V
Linear Integrated Systems
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DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. gfs gos rds(on) Ci……